III-V alloy heterostructure high speed avalanche photodiodes

Heterostructure avalanche photodiodes have been successfully fabricated in several III-V alloy systems: GaAlAs/GaAs, GaAlSb/GaSb, GaAlAsSb/GaAlSb, and InGaAsP/InP. These diodes cover optical wavelengths from 0.4 to 1.8 \mu m. Early stages of development show very encouraging results. High speed response of 95 percent have been obtained. The dark currents and the excess avalanche noise will also be discussed. A direct comparison of GaAlSb, GaAlAsSb, and InGaAsP avalanche photodiodes is given.

[1]  J. Donnelly,et al.  Ion‐implanted n‐ and p‐type layers in InP , 1977 .

[2]  P. Chatterjee,et al.  Luminescence properties of Be‐implanted GaAs1−xPx (x∼0.38) , 1976 .

[3]  R. Eden,et al.  Heterojunction III—V alloy photodetectors for high-sensitivity 1.06-µm optical receivers , 1975, Proceedings of the IEEE.

[4]  H. Morkoç,et al.  Microwave InxGa1?xAsyP1?y/InP f.e.t , 1978 .

[5]  K. Nakajima,et al.  Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates , 1978 .

[6]  J. J. Hsieh,et al.  GaInAsP/InP Avalanche Photodiodes* , 1978, Integrated and Guided Wave Optics.

[7]  R. A. Logan,et al.  Ionization Rates of Holes and Electrons in Silicon , 1964 .

[8]  R. Nahory,et al.  High‐efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm , 1978 .

[9]  Y. Takanashi,et al.  InGaAsP/InP Avalanche Photodiode , 1978 .

[10]  C. Bozler,et al.  Uniform‐carrier‐concentration p‐type layers in GaAs produced by beryllium ion implantation , 1976 .

[11]  Y. Suematsu,et al.  In 1-x Ga x As y P 1-y /InP DH lasers fabricated on InP , 1978 .

[12]  H. Law,et al.  Interband scattering effects on secondary ionization coefficients in GaAs , 1978 .

[13]  N. Holonyak,et al.  Lattice matching and dislocations in LPE in1−xGaxP1−zAsz—InP heterojunctions , 1977 .

[14]  M. Horiguchi,et al.  Spectral losses of low-OH-content optical fibres , 1976 .

[15]  H. Law,et al.  Ion-implanted InGaAsP avalanche photodiode , 1978 .

[16]  R. Moon,et al.  Growth and Characterization of InP ‐ lnGaAsP Lattice-Matched Heterojunctions , 1973 .

[17]  Thomas P. Pearsall,et al.  The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μm , 1978 .

[18]  I. Deyhimy,et al.  High sensitivity optical receivers for 1.0-1.4 µm fiber-optic systems , 1978 .

[19]  L. W. James,et al.  Growth and characterization of InGaAsP–InP lattice‐matched heterojunctions , 1976 .

[20]  James S. Harris,et al.  1.0–1.4‐μm high‐speed avalanche photodiodes , 1978 .

[21]  R. L. Johnston,et al.  Double-drift-region (p + pnn + ) avalanche diode oscillators , 1970 .

[22]  W. Eickhoff,et al.  Transparent, highly sensitive GaAs/(GaAl)As photodiode , 1977 .

[23]  J. Harris,et al.  High‐efficiency AlGaAs/GaAs concentrator solar cells , 1979 .

[24]  T. H. Windhorn,et al.  Liquid‐phase epitaxial growth of lattice‐matched InGaAsP on (100)‐InP for the 1.15–1.31‐μm spectral region , 1978 .

[25]  W. Mclevige,et al.  Electrical profiling and optical activation studies of Be‐implanted GaAs , 1977 .

[26]  R. Nahory,et al.  Threshold dependence on active-layer thickness in InGaAsP/InP d.h. lasers , 1978 .

[27]  L. Eastman,et al.  In situ in etching technique for l.p.e. InP , 1976 .

[28]  A. Ballman,et al.  Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm , 1978 .

[29]  GaAs double-heterostructure photodetectors , 1977 .

[30]  R. Mcintyre.  The distribution of gains in uniformly multiplying avalanche photodiodes: Theory , 1972 .

[31]  Joseph P. Donnelly,et al.  Room-Temperature Operation of GaInAsp/Inp Double-Heterostructure Diode Lasers Emitting at 1.1 µm* , 1976, Integrated Optics.

[32]  R. Dixon,et al.  Continuously operated (Al,Ga)As double‐heterostructure lasers with 70 °C lifetimes as long as two years , 1977 .

[33]  J. Comas,et al.  Beryllium and sulfur ion-implanted profiles in gaas , 1976 .

[34]  A. R. Clawson,et al.  InxGa1−xAsyP1−y/InP heterojunction photodiodes , 1977 .

[35]  N. Holonyak,et al.  Single and multiple thin‐layer (Lz≲400 A) In1−xGaxP1−zAsz‐InP heterostructure light emitters and lasers (λ∼1.1 μm, 77 °K) , 1978 .

[36]  C. M. Wolfe,et al.  Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm , 1974 .