TSV Stress-Aware Full-Chip Mechanical Reliability Analysis and Optimization for 3-D IC

In this paper, we propose an efficient and accurate full-chip thermomechanical stress and reliability analysis tool and design optimization methodology to alleviate mechanical reliability issues in 3-D integrated circuits (ICs). First, we analyze detailed thermomechanical stress induced by through-silicon vias in conjunction with various associated structures such as landing pad and dielectric liner. Then, we explore and validate the linear superposition principle of stress tensors and demonstrate the accuracy of this method against detailed finite element analysis simulations. Next, we apply this linear superposition method to full-chip stress simulation and a reliability metric named the von Mises yield criterion. Finally, we propose a design optimization methodology to mitigate the mechanical reliability problems in 3-D ICs. Our numerical experimental results demonstrate the effectiveness of the proposed methodology.

[1]  Xi Chen,et al.  The Mechanical Properties of Electroplated Cu Thin Films Measured by means of the Bulge Test Technique , 2001 .

[2]  Suk-kyu Ryu,et al.  Thermo-mechanical reliability of 3-D ICs containing through silicon vias , 2009, 2009 59th Electronic Components and Technology Conference.

[3]  Luca Benini,et al.  Design Issues and Considerations for Low-Cost 3-D TSV IC Technology , 2010, IEEE Journal of Solid-State Circuits.

[4]  V. Kripesh,et al.  Optimization of the Thermomechanical Reliability of a 65 nm Cu/Low-$k$ Large-Die Flip Chip Package , 2009, IEEE Transactions on Components and Packaging Technologies.

[5]  Jae-Seok Yang,et al.  TSV stress aware timing analysis with applications to 3D-IC layout optimization , 2010, Design Automation Conference.

[6]  Suk-kyu Ryu,et al.  Impact of Near-Surface Thermal Stresses on Interfacial Reliability of Through-Silicon Vias for 3-D Interconnects , 2011, IEEE Transactions on Device and Materials Reliability.

[7]  T. Kenny,et al.  What is the Young's Modulus of Silicon? , 2010, Journal of Microelectromechanical Systems.

[8]  Wei Wang,et al.  Thermal and spatial profiling of TSV-induced stress in 3DICs , 2011, 2011 International Reliability Physics Symposium.

[9]  Jae-Seok Yang,et al.  Stress-driven 3D-IC placement with TSV keep-out zone and regularity study , 2010, 2010 IEEE/ACM International Conference on Computer-Aided Design (ICCAD).

[10]  Xi Liu,et al.  Full-chip through-silicon-via interfacial crack analysis and optimization for 3D IC , 2011, 2011 IEEE/ACM International Conference on Computer-Aided Design (ICCAD).

[11]  Sung Kyu Lim,et al.  Study of Through-Silicon-Via Impact on the 3-D Stacked IC Layout , 2013, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

[12]  C. Selvanayagam,et al.  Failure analyses of 3D Sip (system-in-package) and WLP (wafer-level package) by finite element methods , 2009, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[13]  C. Liu,et al.  Amorphous metallic thin films as copper diffusion barrier for advanced interconnect applications , 2009, 2009 11th Electronics Packaging Technology Conference.

[14]  Hsien-Hsin S. Lee,et al.  3D-MAPS: 3D Massively parallel processor with stacked memory , 2012, 2012 IEEE International Solid-State Circuits Conference.

[15]  Xi Liu,et al.  Failure analysis of through-silicon vias in free-standing wafer under thermal-shock test , 2013, Microelectron. Reliab..

[16]  Sung Kyu Lim,et al.  Chip/package co-analysis of thermo-mechanical stress and reliability in TSV-based 3D ICs , 2012, DAC Design Automation Conference 2012.

[17]  R. Ramani,et al.  CMOS stress sensors on [100] silicon , 2000, IEEE Journal of Solid-State Circuits.

[18]  R. Tummala,et al.  Failure mechanisms and optimum design for electroplated copper Through-Silicon Vias (TSV) , 2009, 2009 59th Electronic Components and Technology Conference.

[19]  J. D. del Alamo,et al.  Fabrication and Characterization of Through-Substrate Interconnects , 2010, IEEE Transactions on Electron Devices.

[20]  Sung Kyu Lim,et al.  A study of Through-Silicon-Via impact on the 3D stacked IC layout , 2009, 2009 IEEE/ACM International Conference on Computer-Aided Design - Digest of Technical Papers.

[21]  V. Moroz,et al.  Performanace and reliability analysis of 3D-integration structures employing Through Silicon Via (TSV) , 2009, 2009 IEEE International Reliability Physics Symposium.

[22]  Xin Zhao,et al.  Analysis of DC current crowding in through-silicon-vias and its impact on power integrity in 3D ICs , 2012, DAC Design Automation Conference 2012.

[23]  S. Franssila Introduction to microfabrication , 2004 .

[24]  angesichts der Corona-Pandemie,et al.  UPDATE , 1973, The Lancet.

[25]  P. Soussan,et al.  Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k / metal gate CMOS performance , 2010, 2010 International Electron Devices Meeting.

[26]  Jian-Qiang Lu,et al.  Modeling Thermal Stresses in 3-D IC Interwafer Interconnects , 2006, IEEE Transactions on Semiconductor Manufacturing.

[27]  Paresh Limaye,et al.  Design issues and considerations for low-cost 3D TSV IC technology , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).