论文信息 - Scattering with Ionized Impurities - 字舞流文

Scattering with Ionized Impurities

Impurity scattering in semiconductors is discussed presenting the Brooks–Herring and Conwell–Weisskopf models. More advanced treatments, such as Ridley’s statistical screening and partial-wave analysis, are also briefly discussed.

Massimo V. Fischetti | William G. Vandenberghe | M. Fischetti | W. Vandenberghe

[1] S. Laux,et al. Comment on “Influence of the doping element on the electron mobility in n silicon” [J. Appl. Phys. 83, 3096 (1998)] , 1999 .

[2] A. Morita,et al. Shallow Donor Potential in Silicon , 1966 .

[3] Harvey Brooks,et al. Theory of the Electrical Properties of Germanium and Silicon , 1955 .

[4] H. Bennett,et al. Calculated majority‐ and minority‐carrier mobilities in heavily doped silicon and comparisons with experiment , 1992 .

[5] H. Queisser,et al. Electron scattering by ionized impurities in semiconductors , 1981 .

[6] F. Bartoli,et al. Phase-shift calculation of ionized impurity scattering in semiconductors , 1981 .

[7] Victor F. Weisskopf,et al. Theory of Impurity Scattering in Semiconductors , 1950 .

[8] J. Friedel. XIV. The distribution of electrons round impurities in monovalent metals , 1952 .

[9] Gerald D. Mahan,et al. Energy gap in Si and Ge: Impurity dependence , 1980 .

[10] B. Ridley,et al. Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for charged-impurity scattering in semiconductors: Third-body interference , 1977 .