A highly efficient class-EF2 power amplifier in GaAs pHEMT technology

This paper presents a highly efficient class-EF2 power amplifier in GaAs pHEMT technology with high output power. Drain swing voltage of class-E power amplifier (PA) imposes a restriction on its output power. In this work, using a combination of class-E and F relaxes this limitation which may help in increasing DC supply voltage. Higher DC supply voltage of class-EF2 PA leads to increased output power and efficiency, as output power is proportional to supply voltage. In addition, higher supply voltage permits PA to work under lower current which can cause to reduce power dissipation. Proposed class-EF2 PA is implemented in a single recess AlGaAs–InGaAs pHEMT technology with 0.25-µm gate length; power added efficiency of 52% at 31 dBm output power is achieved at 1.8 GHz.

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