论文信息 - On the use of large pixel PIN diode array in plasma diagnostics

On the use of large pixel PIN diode array in plasma diagnostics

Silicon PIN diodes tailored for x-ray diagnostics of high-temperature plasmas were investigated. Their spectral responsivity was determined from the direct calibration of the diodes by x-rays and indirectly through the bombardment by monoenergetic electrons, the accuracy of the calibration amounts to 11.5 %. The single diodes are used in combination with an absorption foil technique, the large pixel PIN diode array was utilized in a compact spectrometer for monitoring the electron temperature and density of laser produced plasma. The construction of the spectrometer and an example of experimental results are presented.

[1] T. J. Tanaka,et al. Low-energy x-ray interaction coefficients: Photoabsorption, scattering, and reflection: E = 100–2000 eV Z = 1–94☆ , 1982 .

[2] R. H. Hamstra,et al. Noise and frequency response of silicon photodiode operational amplifier combination. , 1972, Applied optics.

[3] D M Corallo,et al. The X-ray calibration of silicon p-i-n diodes between 1.5 and 17.4 keV , 1980 .

[4] T. Jach,et al. PIN diodes as detectors in the energy region 500 eV–10 keV , 1983 .

[5] W. Veigele,et al. Photon cross sections from 0.1 keV to 1 MeV for elements Z = 1 to Z = 94* , 1973 .

[6] E. Tegeler. New Developments in VUV Radiometry , 1990 .

[7] B Luther-Davies,et al. EXAFS spectroscopy by continuum soft X-ray emission from a short pulse laser-produced plasma , 1986 .

[8] M. Mattioli,et al. Soft-X-ray spectroscopic diagnostics of laboratory plasmas , 1981 .

[9] M. Kopecký,et al. The choice of spectroscopic scheme in x-ray plasma diagnostics , 1990 .

[10] Eiji Sakai,et al. Present status of room temperature semiconductor detectors , 1982 .