Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperature dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.

[1]  F. Heiman,et al.  The effects of oxide traps on the MOS capacitance , 1965 .

[2]  D. Lang,et al.  Nonradiative capture and recombination by multiphonon emission in GaAs and GaP , 1977 .

[3]  H. Hasegawa,et al.  Electrical modeling of compound semiconductor interface for FET device assessment , 1980, IEEE Transactions on Electron Devices.

[4]  M. J. Kirton,et al.  Capture and emission kinetics of individual Si:SiO2 interface states , 1986 .

[5]  Hickmott Tw.  Admittance measurements of acceptor freezeout and impurity conduction in Be-doped GaAs. , 1991 .

[6]  T. L. Tewksbury,et al.  Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs , 1993 .

[7]  D. Fleetwood,et al.  Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices , 1993 .

[8]  Luca Larcher,et al.  Statistical simulation of leakage currents in MOS and flash memory devices with a new multiphonon trap-assisted tunneling model , 2003 .

[9]  T. Ma,et al.  Inelastic electron tunneling spectroscopy study of ultrathin HfO2 and HfAlO , 2003 .

[10]  G. Bersuker,et al.  Spectroscopic properties of oxygen vacancies in monoclinic HfO2 calculated with periodic and embedded cluster density functional theory , 2007 .

[11]  T. Ma,et al.  Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics , 2010, Advanced materials.

[12]  Krishna C. Saraswat,et al.  Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals , 2010 .

[13]  G. Bersuker,et al.  Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage Characteristics , 2010, IEEE Transactions on Electron Devices.

[14]  T. Grasser,et al.  Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors , 2010 .

[15]  J. Alamo.  Nanometre-scale electronics with III–V compound semiconductors , 2011, Nature.

[16]  T. Ma.  Inelastic Electron Tunneling Spectroscopy (IETS) Study of Ultra-Thin Gate Dielectrics for Advanced CMOS Technology , 2011 .

[17]  W. B. Knowlton,et al.  A Physical Model of the Temperature Dependence of the Current Through $\hbox{SiO}_{2}\hbox{/}\hbox{HfO}_{2}$ Stacks , 2011, IEEE Transactions on Electron Devices.

[18]  M. Rodwell,et al.  A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices , 2012, IEEE Transactions on Electron Devices.

[19]  A. Zaka,et al.  Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects , 2012, IEEE Transactions on Electron Devices.

[20]  Tibor Grasser,et al.  Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities , 2012, Microelectron. Reliab..

[21]  V. Chobpattana,et al.  Frequency dispersion in III-V metal-oxide-semiconductor capacitors , 2012 .

[22]  E. Lind,et al.  A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETs , 2013, IEEE Transactions on Electron Devices.

[23]  Xiuling Li,et al.  A Distributive-Transconductance Model for Border Traps in III–V/High-k MOS Capacitors , 2013, IEEE Electron Device Letters.

[24]  Y. Taur,et al.  Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics , 2014 .

[25]  E. Vogel,et al.  Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states , 2014 .

[26]  Yuan Taur,et al.  Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures , 2014, Microelectron. Reliab..

[27]  Aaron Thean,et al.  Engineering the III-V Gate Stack Properties by Optimization of the ALD Process , 2014 .

[28]  Cor Claeys,et al.  Assessment of the Impact of Inelastic Tunneling on the Frequency-Depth Conversion from Low-Frequency Noise Spectra , 2014, IEEE Transactions on Electron Devices.

[29]  Laura Nyns,et al.  Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition , 2014 .