论文信息 - Ar+ laser-induced forward transfer (LIFT): a novel method for micrometer-size surface patterning

Ar+ laser-induced forward transfer (LIFT): a novel method for micrometer-size surface patterning

Abstract As a result of a systematic study on laser-induced forward transfer of tungsten (W) thin films by a focused Ar+ laser (λ=514 nm, 2w0=3μm), it is shown that deposition of 2–3μm diameter W spots of 100 nm thickness and 100% coverage is attainable at low processing powers (50–100 mW).

[1] Eric Fogarassy,et al. Laser-induced forward transfer: A new approach for the deposition of high T_c superconducting thin films , 1989 .

[2] Tamás Szörényi,et al. Laser induced forward transfer: The effect of support-film interface and film-to-substrate distance on transfer , 1992 .

[3] L. Vriens,et al. Laser-induced optical recording in thin films , 1983 .

[4] F. J. Adrian,et al. Metal deposition from a supported metal film using an excimer laser , 1986 .

[5] A. N. Jette,et al. A study of the mechanism of metal deposition by the laser-induced forward transfer process , 1987 .

[6] Tamás Szörényi,et al. Pulsed laser ablative deposition of thin metal films , 1989 .

[7] Zsolt Toth,et al. Pulsed laser processing of Ge/Se thin film structures , 1991 .

[8] A. N. Jette,et al. Metal deposition at 532 nm using a laser transfer technique , 1988 .

[9] G. Was,et al. Laser-driven micro-explosive bonding of aluminium films to copper and silicon , 1988 .