Novel ZrInZnO Thin‐film Transistor with Excellent Stability
暂无分享,去创建一个
Yeon-Gon Mo | Jae Kyeong Jeong | Jin-seong Park | Y. Mo | Hye-dong Kim | Jin-Seong Park | Kwang-Suk Kim | Yong Gil Park | Hye-Dong Kim | Kwang-Suk Kim | Yongchan Park | Hyedong Kim
[1] M. Marezio. Refinement of the crystal structure of In2O3 at two wavelengths , 1966 .
[2] M. Powell,et al. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors , 1983 .
[3] Jerzy Kanicki,et al. Bias stress‐induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the ‘‘carrier‐induced defect creation’’ model correct? , 1990 .
[4] Jerzy Kanicki,et al. Bias‐stress‐induced stretched‐exponential time dependence of charge injection and trapping in amorphous thin‐film transistors , 1993 .
[5] Sigurd Wagner,et al. DC-gate-bias stressing of a-Si:H TFTs fabricated at 150/spl deg/C on polyimide foil , 2001 .
[6] Benjamin J. Norris,et al. ZnO-based transparent thin-film transistors , 2003 .
[7] Min-Koo Han,et al. A new voltage-modulated AMOLED pixel design compensating for threshold voltage variation in poly-Si TFTs , 2004 .
[8] H. Ohta,et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.
[9] A. Nathan,et al. Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs , 2004, IEEE Electron Device Letters.
[10] Kapil Sakariya,et al. Threshold voltage instability of amorphous silicon thin-film transistors under constant current stress , 2005 .
[11] E. Fortunato,et al. Fully Transparent ZnO Thin‐Film Transistor Produced at Room Temperature , 2005 .
[12] Burag Yaglioglu,et al. High-mobility amorphous In2O3-10 wt %ZnO thin film transistors , 2006 .
[13] R. B. M. Cross,et al. Investigating the stability of zinc oxide thin film transistors , 2006 .
[14] Ho-Kyoon Chung,et al. 40.1: Invited Paper: AMOLED Technology for Mobile Displays , 2006 .
[15] T. Riedl,et al. Towards See‐Through Displays: Fully Transparent Thin‐Film Transistors Driving Transparent Organic Light‐Emitting Diodes , 2006 .
[16] T. Kamiya,et al. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering , 2006 .
[17] Peter Francis Carcia,et al. High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition , 2006 .
[18] J. Wager,et al. Zinc tin oxide thin-film transistors via reactive sputtering using a metal target , 2006 .
[19] Jinyong Oh,et al. Effects of Electrical Bias Stress on the Performance of ZnO -Based TFTs Fabricated by RF Magnetron Sputtering , 2006 .
[20] Yeon-Gon Mo,et al. High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper , 2007 .
[21] Yeon-Gon Mo,et al. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment , 2007 .
[22] Yeon-Gon Mo,et al. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel , 2007 .
[23] David P. Norton,et al. Room temperature deposited indium zinc oxide thin film transistors , 2007 .
[24] Chih-Lung Lin,et al. A Novel LTPS-TFT Pixel Circuit Compensating for TFT Threshold-Voltage Shift and OLED Degradation for AMOLED , 2007, IEEE Electron Device Letters.
[25] Dan Zhao,et al. Solution-Processed Indium Zinc Oxide Transparent Thin Film Transistors , 2007 .
[26] Cheol Seong Hwang,et al. Origin of Subthreshold Swing Improvement in Amorphous Indium Gallium Zinc Oxide Transistors , 2008 .
[27] John F. Muth,et al. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors , 2008 .