A 10-Gbit/s laser driver IC with i-AlGaAs/n-GaAs doped-channel hetero-MISFETs (DMTs)

Ultra-high-speed laser driver ICs for multigigabit per second optical communication systems have been demonstrated using gate recess structure doped-channel hetero-MISFETs (DMTs) with 0.35- mu m-length gates. The laser driver ICs were fabricated with advanced processes, such as direct-writing electron-beam lithography and air-bridge interconnects. They have operated at 10 Gb/s with risetimes and falltimes as fast as 40 ps, which is the highest speed ever reported. The laser driver ICs can drive up to 60 mA into a 25- Omega load. In addition, direct laser diode modulation has been realized at 10-Gb/s.<<ETX>>

[1]  K. R. Shastri,et al.  4.0 Gb/s NMOS laser driver , 1989, 1989 Proceedings of the IEEE Custom Integrated Circuits Conference.

[2]  S. Kumashiro,et al.  A 760mS/mm N+self-aligned enhancement mode doped-channel MIS-like FET (DMT) , 1986, 1986 International Electron Devices Meeting.

[3]  Sadao Fujita,et al.  10 Gbit/s, 100 km optical fibre transmission experiment using high-speed MQW DFB-LD and back-illuminated GaInAs APD , 1989 .