Electrical determination of bandgap narrowing in bipolar transistors with epitaxial Si, epitaxial Si/sub 1-x/Ge/sub x/, and ion implanted bases
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G. J. Parker | Alain Chantre | Peter Ashburn | Mireille Mouis | Md. Roslan Hashim | G. Vincent | H. Boussetta
[1] D.B.M. Klaassen,et al. A unified mobility model for device simulation—I. Model equations and concentration dependence , 1992 .
[2] J. Cressler,et al. On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues , 1993 .
[3] R. M. Swanson,et al. VIB-4 temperature dependence of minority electron mobility and bandgap narrowing in p + Si , 1987 .
[4] A. Schuppen,et al. SiGe-HBTs with high fT at moderate current densities , 1994 .
[5] J. Slotboom,et al. Unified apparent bandgap narrowing in n- and p-type silicon , 1992 .
[6] A. Chantre,et al. An investigation of nonideal base currents in advanced self-aligned 'etched-polysilicon' emitter bipolar transistors , 1991 .
[7] W. Kauffman,et al. The temperature dependence of ideal gain in double diffused silicon transistors , 1968 .
[8] W. Dumke. The effect of base doping on the performance of Si bipolar transistors at low temperatures , 1981, IEEE Transactions on Electron Devices.
[9] J. Cressler,et al. On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations , 1993 .
[10] J. Song,et al. Comments on On the base profile design and optimization of epitaxial Si- and SiGe-base bipolar tech , 1997 .
[11] Bernard S. Meyerson,et al. Heterojunction bipolar transistors using Si-Ge alloys , 1989 .
[12] J. Hauser,et al. Electron and hole mobilities in silicon as a function of concentration and temperature , 1982, IEEE Transactions on Electron Devices.
[13] C. Sah,et al. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics , 1957, Proceedings of the IRE.
[14] Z. A. Shafi,et al. The importance of neutral base recombination in compromising the gain of Si/SiGe heterojunction bipolar transistors , 1991 .
[15] R. M. Swanson,et al. Simultaneous measurement of hole lifetime, hole mobility and bandgap narrowing in heavily doped n-type silicon , 1985, 1985 International Electron Devices Meeting.
[16] H. C. de Graaff,et al. Measurements of bandgap narrowing in Si bipolar transistors , 1976 .
[17] C. D. Thurmond. The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaP , 1975 .
[18] David L. Harame,et al. Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperature , 1989 .
[19] J. Woo,et al. Optimization of bipolar transistors for low temperature operation , 1987, 1987 International Electron Devices Meeting.
[20] M. Green. Intrinsic concentration, effective densities of states, and effective mass in silicon , 1990 .
[21] Judy L. Hoyt,et al. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors , 1989 .
[22] J. Cressler,et al. Single crystal emitter gap for epitaxial Si- and SiGe-base transistors , 1991, International Electron Devices Meeting 1991 [Technical Digest].
[23] P. Ashburn,et al. Comparison of experimental and theoretical results on polysilicon emitter bipolar transistors , 1984, IEEE Transactions on Electron Devices.
[24] J. Sturm,et al. The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors , 1991, IEEE Electron Device Letters.
[25] M. Caymax,et al. Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si1−xGex layers , 1993 .
[26] K. Jenkins,et al. On the low-temperature static and dynamic properties of high-performance silicon bipolar transistors , 1989 .
[27] J. Cressler,et al. An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation , 1994, IEEE Electron Device Letters.
[28] Keith A. Jenkins,et al. Sub-30ps ECL circuits using high-f/sub T/ Si and SiGe epitaxial base SEEW transistors , 1990, International Technical Digest on Electron Devices.
[29] D.B.M. Klaassen,et al. A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime , 1992 .