论文信息 - Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V - 字舞流文

Novel gate-recessed vertical InAs/GaSb TFETs with record high ION of 180 μA/μm at VDS = 0.5 V

A. Seabaugh | J. Kuo | H. Xing | P. Fay | T. Vasen | Qin Zhang | T. Kosel | Y. Lu | Yeqing Lu | M. Wistey | M. Qi | Guangle Zhou | S. Chae | Rui Li | Haijun Zhu | Q. Zhang | R. Li | H. Zhu