论文信息 - Design of a 340GHz GaAs monolithic integrated sub-harmonic mixer

Design of a 340GHz GaAs monolithic integrated sub-harmonic mixer

In this paper, a 340GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is presented. The mixer circuit is fabricated on a 12um GaAs substrate included planar Schottky diode in a balanced configuration, the passive RF/LO and IF matching networks, filtering circuits, as well as transitions from waveguide to suspended micro-strip. Simulated results for the 340 GHz mixer achieved DSB conversion loss of 6.49dB at 306.4GHz when the LO pumped power was 5.96dBm at 165GHz. The conversion loss was less than 8dB from 290GHz to 355GHz.

[1] G. Chattopadhyay,et al. Schottky diode-based terahertz frequency multipliers and mixers , 2010 .

[2] B. Thomas,et al. A low-noise fixed-tuned 300-360-GHz sub-harmonic mixer using planar Schottky diodes , 2005, IEEE Microwave and Wireless Components Letters.

[3] G. Beaudin,et al. Numerical analysis of a 330 GHz subharmonic mixer with planar Schottky diodes , 2003 .

[4] P. Siegel. Terahertz Technology , 2001 .

[5] Choonsup Lee,et al. A Broadband 835–900-GHz Fundamental Balanced Mixer Based on Monolithic GaAs Membrane Schottky Diodes , 2010, IEEE Transactions on Microwave Theory and Techniques.