Structure of the carrot defect in 4H-SiC epitaxial layers

Transmission electron microscopy and KOH etching were used to determine the structure of the carrot defect in 4H-SiC epilayers. The defect consists of two intersecting planar faults on prismatic {11¯00} and basal {0001} planes. Both faults are connected by a stair-rod dislocation with Burgers vector 1∕n [101¯0] with n>3 at the crossover. A Frank-partial dislocation with b=1∕12[44¯03] terminates the basal fault.

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