50 mW CW-operated single-mode surface-emitting AlGaAs lasers with 45 degrees total reflection mirrors

The authors report on the fabrication and testing of surface-emitting AlGaAs 3.5 mu m ridge lasers with etched mirrors and 45 degrees internal deflectors. The 45 degrees mirror coupling coefficient and the resulting threshold current penalty have been analyzed theoretically and experimentally. A surface-emitted optical power of 50 mW CW at 26 mA threshold current and external differential efficiency of 57% has been achieved in lateral fundamental-mode operation. The optical power density of 14 mW CW per micrometer ridge width is the highest reported to date and produces two-dimensional surface-emitting laser arrays of diffraction-limited beam quality suitable for optical storage applications.<<ETX>>

[1]  Mitsunori Sugimoto,et al.  Surface‐emitting GaAs/AlGaAs lasers with dry‐etched 45° total reflection mirrors , 1989 .

[2]  M. Sergant,et al.  High power cw operation of GaAs/GaAlAs surface‐emitting lasers mounted in the junction‐up configuration , 1991 .

[3]  Paul Lagasse,et al.  Bidirectional beam propagation method , 1988 .

[4]  A. Larsson,et al.  PSEUDOMORPHIC INYGA1-YAS/GAAS/ALXGA1-XAS SINGLE QUANTUM WELL SURFACE-EMITTING LASERS WITH INTEGRATED 45 BEAM DEFLECTORS , 1991 .

[5]  Johannes Gerdes,et al.  Bidirectional beam-propagation method based on the Method of Lines , 1993 .

[6]  G. D. Johnson,et al.  Monolithic two-dimensional surface-emitting strained-layer InGaAs/AlGaAs and AlInGaAs/AlGaAs diode laser arrays with over 50% differential quantum efficiencies , 1991 .

[7]  Folded‐cavity transverse junction stripe surface‐emitting laser , 1989 .

[8]  N. Carlson,et al.  Phase-locked operation of a grating-surface-emitting diode laser array , 1987 .

[9]  Wilfried Lenth,et al.  Very high-power (425 mW) AlGaAs SQW-GRINSCH ridge laser with frequency-doubled output (41 mW at 428 nm) , 1991 .

[10]  Y. Uematsu,et al.  Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers , 1985, IEEE Journal of Quantum Electronics.

[11]  M. Jansen,et al.  Monolithic Two-dimensional Surface-emitting Diode Laser Arrays Mounted In The Junction-down Configuration , 1992, LEOS '92 Conference Proceedings.

[12]  J. Merz,et al.  Low‐threshold InGaAs/GaAs strained‐layer ridge waveguide surface emitting lasers with two 45° angle etched internal total reflection mirrors , 1991 .

[13]  David J. Webb,et al.  Special Issue Papers Full-Wafer Technology-A New Approach to Large-scale Laser Fabrication and Integration , 1991 .