论文信息 - An 1 GHz Class E LDMOS Power Amplifier

An 1 GHz Class E LDMOS Power Amplifier

A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit is implemented with lumped and distributed elements. An output power of 6.2 W at 69 % drain efficiency with a gain of 11 dB was obtained at 1 GHz. Both simulations and measurements of the amplifier are presented within this paper. This is to our knowledge the highest efficiency and output power reported for a class E amplifier at 1 GHz.

Herbert Zirath | Andreas Adahl

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