论文信息 - Circuit Characterization of V-Band IMPATT Oscillators and Amplifiers

Circuit Characterization of V-Band IMPATT Oscillators and Amplifiers

A circuit model has been developed to describe a class of commonly used waveguide cavities for V-band IMPATT oscillators and amplifiers. Calculated results based on this model used in conjunction with theoretical small-signal IMPATT characteristics have shown good qualitative agreement with experimental data. Detailed characterization of a small-signal V-band IMPATT amplifier and a mechanical tuned oscillator are presented, and the predicted performance is compared with measurements.

T. T. Fong | D. L. English | K. P. Weller

[1] W. N. Grant. Electron and hole ionization rates in epitaxial silicon at high electric fields , 1973 .

[2] P. Khan,et al. Theoretical and Experimental Analysis of a Waveguide Mounting Structure , 1971 .

[3] E. Yamashita,et al. Theory of a tunnel diode oscillator in a microwave structure , 1966 .

[4] L. Infeld. PART IV. THE IMPEDANCE OF A RECTANGULAR WAVE GUIDE WITH A THIN ANTENNA , 1949 .

[5] H. Gummel,et al. Large-signal analysis of a silicon Read diode oscillator , 1969 .

[6] R. Collin. Field theory of guided waves , 1960 .

[7] B. Deloach,et al. A New Microwave Measurement Technique to Characterize Diodes and an 800 Gc Cutoff Frequency Varactor at Zero Volts Bias , 1963 .

[8] L. Lewin,et al. A contribution to the theory of probes in waveguides , 1958 .

[9] H. J. Kuno,et al. Nonlinear and Large-Signal Characteristics of Millimeter-Wave IMPATT Amplifiers , 1973 .

[10] J. A. Bradshaw. Scattering from a Round Metal Post and Gap , 1973 .

[11] T. Misawa,et al. Negative resistance in p-n junctions under avalanche breakdown conditions, part II , 1966 .

[12] D. Saxon,et al. Discontinuities in waveguides : notes on lectures by Julian Schwinger , 1968 .

[13] J. E. Rowe,et al. Microwave circuit characteristics of bulk GaAs oscillators , 1967 .