Full-Chip Electro-Thermal Coupling Extraction and Analysis for Face-to-Face Bonded 3D ICs

Due to the short die-to-die distance and inferior heat dissipation capability, Face-to-Face (F2F) boned 3D ICs are often considered to be vulnerable to electrical and thermal coupling. This study is the first to quantify the impacts of the electro-thermal coupling on the full-chip timing, power, and performance. We first present an implementation flow for realistic F2F 3D ICs including pad layers and power grids. Then, we propose our signal integrity analysis, parasitic extraction, and thermal analysis flows. Next, we investigate the impacts of the coupling on the delay, power, and noise of F2F 3D ICs, and provide guidelines to mitigate these effects. Our experimental results show that the inter-die electrical coupling causes up to 5.81% timing degradation and 4.00% noise increase, while the thermal coupling leads to less than 0.41% timing degradation and nearly no noise increase. The impact of the combined electro-thermal coupling on delay and noise reaches 6.07% and 4.05%, respectively.

[1]  Sung Kyu Lim,et al.  Full-chip inter-die parasitic extraction in face-to-face-bonded 3D ICs , 2015, 2015 IEEE/ACM International Conference on Computer-Aided Design (ICCAD).

[2]  J. Lau Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration , 2011, 2011 International Symposium on Advanced Packaging Materials (APM).

[3]  Gabriel H. Loh,et al.  Thermal analysis of a 3D die-stacked high-performance microprocessor , 2006, GLSVLSI '06.

[4]  S. Wong,et al.  Monolithic 3D Integrated Circuits , 2007, 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).

[5]  S. Lim,et al.  Thermal impact study of block folding and face-to-face bonding in 3D IC , 2015, 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).

[6]  Eric Beyne,et al.  Ultra-Fine Pitch 3D Integration Using Face-to-Face Hybrid Wafer Bonding Combined with a Via-Middle Through-Silicon-Via Process , 2016, 2016 IEEE 66th Electronic Components and Technology Conference (ECTC).

[7]  Sungdong Kim,et al.  Wafer level Cu-Cu direct bonding for 3D integration , 2015 .

[8]  Sung Kyu Lim,et al.  Shrunk-2-D: A Physical Design Methodology to Build Commercial-Quality Monolithic 3-D ICs , 2017, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.