论文信息 - Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions

Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions

Abstract Analytical solutions for the breakdown voltage of abrupt cylindrical and spherical junctions have been obtained, using suitable approximations for the electric field in the depletion layer. These solutions are shown to be within ±1% of exact computer solutions for doping densities of less thant 10 16 cm −1 . By normalization to the parallel plane case, these solutions have been presented in a form which allows the computation of the breakdown voltage of both cylindrical and spherical junctions using a single curve for each situation.

B. Jayant Baliga | Sorab K. Ghandhi | S. Ghandhi | B. Baliga

[1] R. R. O'Brien,et al. Avalanche breakdown calculations for a planar p-n junction , 1966 .

[2] D. Speeney,et al. Experimental study of the effect of junction curvature on breakdown voltage in Si , 1967 .

[3] P. R. Wilson. Avalanche breakdown voltage of diffused junctions in silicon , 1973 .

[4] M.S. Adler,et al. Calculation of the diffusion curvature related avalanche breakdown in high-voltage planar p-n junctions , 1975, IEEE Transactions on Electron Devices.

[5] R. M. Warner. Avalanche breakdown in silicon diffused junctions , 1972 .

[6] G. Gibbons,et al. Effect of junction curvature on breakdown voltage in semiconductors , 1966 .

[7] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[8] W. Fulop,et al. Calculation of avalanche breakdown voltages of silicon p-n junctions , 1967 .

[9] C. Bulucea,et al. Surface breakdown in silicon planar junctions—A computer-aided experimental determination of the critical field , 1974 .

[10] R. M. Sirsi,et al. Breakdown voltage of cylindrical Gaussian P- N junctions , 1971 .

[11] R. A. Logan,et al. Ionization Rates of Holes and Electrons in Silicon , 1964 .

[12] A. S. Grove,et al. Breakdown voltage of planar silicon junctions , 1966 .