Self-forming diffusion barrier layer in Cu–Mn alloy metallization
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Junichi Koike | M. Wada | J. Koike | M. Wada
[1] G. Ramanath,et al. Sequence of Mg segregation, grain growth, and interfacial MgO formation in Cu–Mg alloy films on SiO2 during vacuum annealing , 2003 .
[2] K. Maier. Self‐diffusion in copper at “low” temperatures , 1977 .
[3] F. Smits. Measurement of sheet resistivities with the four-point probe , 1958 .
[4] G. Ramanath,et al. Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallization , 2001 .
[5] G. Ramanath,et al. Interfacial phase formation in Cu-Mg alloy films on SiO2 , 2004 .
[6] G. Ramanath,et al. Kinetics of interfacial reaction in Cu–Mg alloy films on SiO2 , 2004 .
[7] T. Nagasaka,et al. Interfacial kinetics of hydrogen with liquid slag containing iron oxide , 2000 .
[8] N. Morimoto,et al. The crystal structures of MnSiO3 polymorphs (rhodonite- and pyroxmangite-type) , 1977 .
[9] Wei Wang,et al. Low-temperature passivation of copper by doping with Al or Mg , 1995 .
[10] W. Lanford,et al. Oxidation resistant high conductivity copper films , 1994 .
[11] T. Nagasaka,et al. Activity Measurement of the Constituents in Liquid Cu–Al Alloy with Mass-Spectrometry , 1998 .
[12] Hyungjun Kim,et al. Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing , 2003 .
[13] C. Cabral,et al. Annealing behavior of Cu and dilute Cu-alloy films: Precipitation, grain growth, and resistivity , 2003 .