论文信息 - On the reliability of SIMS depth profiles through HfO2-stacks - 字舞流文

On the reliability of SIMS depth profiles through HfO2-stacks

C. Huyghebaert | T. Conard | W. Vandervorst | J. Bennett | C. Gondran | H. Witte

[1] T. Conard,et al. Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks , 2003 .

[2] Z. Jiang,et al. Optimal low‐energy SIMS conditions for characterizing ZrO2/Si interfaces , 2002 .