Active Oxidation of SiC

[1]  F. Audubert,et al.  Behavior of SiC at high temperature under helium with low oxygen partial pressure , 2008 .

[2]  Q. Zeng,et al.  Theoretical Investigation for the Active-to-Passive Transition in the Oxidation of Silicon Carbide , 2008 .

[3]  K. Nickel,et al.  Silica on Silicon Carbide , 2008 .

[4]  F. Smith,et al.  Effects of Low‐Pressure Oxidation on the Surface Composition of Single Crystal Silicon Carbide , 2005 .

[5]  Y. Ogura,et al.  Mass Spectrometric Study of Oxidation of SiC in Low-Pressure Oxygen , 2002 .

[6]  C. Bernard,et al.  High-temperature analysis of the thermal degradation of silicon-based materials. II: Ternary Si-C-O, Si-N-O, and Si-C-N compounds , 1999 .

[7]  R. Naslain,et al.  A theoretical and experimental approach to the active-to-passive transition in the oxidation of silicon carbide: Experiments at high temperatures and low total pressures , 1998 .

[8]  Marianne J.H. Balat,et al.  Determination of the active-to-passive transition in the oxidation of silicon carbide in standard and microwave-excited air , 1996 .

[9]  E. Opila Influence of alumina reaction tube impurities on the oxidation of chemically-vapor-deposited silicon carbide , 1995 .

[10]  G. Flamant,et al.  Active to passive transition in the oxidation of silicon carbide at high temperature and low pressure in molecular and atomic oxygen , 1992 .

[11]  K. Nickel The Role of Condensed Silicon Monoxide in the Active-to-Passive Oxidation Transition of Silicon Carbide , 1992 .

[12]  T. Hirai,et al.  High‐Temperature Active Oxidation of Chemically Vapor‐Deposited Silicon Carbide in an Ar─O2 Atmosphere , 1991 .

[13]  Arthur H. Heuer,et al.  Volatility Diagrams for Silica, Silicon Nitride, and Silicon Carbide and Their Application to High‐Temperature Decomposition and Oxidation , 1990 .

[14]  W. L. Vaughn,et al.  Active‐to‐Passive Transition in the Oxidation of Silicon Carbide and Silicon Nitride in Air , 1990 .

[15]  J. Tuset,et al.  Discussion of “thermodynamics of the Si-C-O system for the production of silicon carbide and metallic silicon , 1987 .

[16]  M. Nagamori,et al.  Thermodynamics of the Si-C-O system for the production of silicon carbide and metallic silicon , 1986 .

[17]  S. Singhal Thermodynamic analysis of the high-temperature stability of silicon nitride and silicon carbide , 1976 .

[18]  H. C. Graham,et al.  The Active Oxidation of Si and SiC in the Viscous Gas‐Flow Regime , 1976 .

[19]  G. H. Geiger,et al.  Transport Phenomena in Metallurgy , 1973 .

[20]  Earl A. Gulbransen,et al.  The high-temperature oxidation, reduction, and volatilization reactions of silicon and silicon carbide , 1972 .

[21]  J. Antill,et al.  ACTIVE TO PASSIVE TRANSITION IN THE OXIDATION OF SiC. , 1971 .

[22]  D. E. Rosner,et al.  High-temperature kinetics of the oxidation and nitridation of pyrolytic silicon carbide in dissociated gases , 1970 .

[23]  E. A. Gulbransen,et al.  The Oxidation of Silicon Carbide at 1150° to 1400°C and at 9 × 10 − 3 to 5 × 10 − 1 Torr Oxygen Pressure , 1966 .

[24]  L. S. Darken,et al.  ENHANCEMENT OF DIFFUSION-LIMITED RATES OF VAPORIZATION OF METALS , 1963 .

[25]  C. Wagner,et al.  Passivity during the Oxidation of Silicon at Elevated Temperatures , 1958 .

[26]  J. T. Law The High Temperature Oxidation of Silicon , 1957 .