论文信息 - Electrical properties of CoSi2 precipitates in cobalt-implanted silicon: a conducting atomic force microscopy study - 字舞流文

Electrical properties of CoSi2 precipitates in cobalt-implanted silicon: a conducting atomic force microscopy study

I. Wilson | J. B. Xu | S. Wong | J. Mao | Q. Peng

[1] A. B. Pakhomov,et al. Probing the conducting paths in a metal - insulator composite by conducting atomic force microscopy , 1996 .

[2] F. Houzé,et al. Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes , 1996 .

[3] K. Fung,et al. Characterization of buried cobalt silicide layers in Si by MEVVA implantation , 1995 .

[4] D. L. Klein,et al. Conducting atomic force microscopy of alkane layers on graphite , 1995 .

[5] D. Eaglesham,et al. Interfacial and surface energetics of CoSi2 , 1994 .

[6] Cyrus Shafai,et al. Delineation of semiconductor doping by scanning resistance microscopy , 1994 .

[7] R. S. Spraggs,et al. Microstructural studies of epitaxial CoSi2 layers on silicon produced by ion beam synthesis and rapid thermal annealing , 1993 .