论文信息 - The Influence of TiN Thickness and $\hbox{SiO}_{2}$ Formation Method on the Structural and Electrical Properties of $\hbox{TiN}/ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stacks - 字舞流文

The Influence of TiN Thickness and $\hbox{SiO}_{2}$ Formation Method on the Structural and Electrical Properties of $\hbox{TiN}/ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stacks

M. Kaiser | L. Witters | G. Vellianitis | B. Duriez | M. V. van Dal | R. Lander | G. Boccardi | F. Voogt