First phase nucleation in silicon–transition‐metal planar interfaces
暂无分享,去创建一个
[1] M. Hansen,et al. Constitution of Binary Alloys , 1958 .
[2] J. W. Mayer,et al. Kinetics of silicide formation by thin films of V on Si and SiO2 substrates , 1974 .
[3] M. Hansen,et al. Constitution of binary alloys, first supplement , 1965 .
[4] J. M. Andrews. The role of the metal-semiconductor interface in silicon integrated circuit technology , 1974 .
[5] G. V. Kidson,et al. Some aspects of the growth of diffusion layers in binary systems , 1961 .
[6] S. T. Picraux,et al. Characterization of silicon metallization systems using energetic ion backscattering , 1974 .
[7] F. Shunk,et al. Constitution of Binary Alloys Second Supplement , 1969 .
[8] J. M. Andrews,et al. Chemical Bonding and Structure of Metal-Semiconductor Interfaces , 1975 .