Electromechanical analysis of suspended carbon nanotubes for memory applications

A nanoelectromechanical model based on atomistic simulations including charge transfer was investigated. Classical molecular dynamics simulations combined with continuum electric models were applied to a carbon-nanotube nanoelectromechanical memory device that was characterized by carbon-nanotube bending performance. For a suspended (5, 5) carbon-nanotube bridge with a length of 11.567?nm (LCNT) and a trench depth of 0.9?1.5?nm (H), molecular dynamics results showed that the threshold voltage increased linearly as H increased and the transition time decreased exponentially at each trench depth as the applied bias increased. When H/LCNT was below 0.13, the carbon-nanotube nanoelectromechanical memories acted as nonvolatile memory devices, whereas they were volatile memory or switching devices when H/LCNT was above 0.14.

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