Atomic-plane-thick reconstruction across the interface during heteroepitaxial bonding of InP-clad quantum wells to Si

Monolithic integration of InP-based materials on Si will allow lasers as well as optical amplifiers operating at 1.55μm to be efficiently included in photonic integrated circuits. We demonstrate here oxide-free heteroepitaxial bonding of InP-clad GaInAs quantum wells to Si, with an atomic-plane-thick reconstruction across the InP-Si interface. The wells photoluminescence emitted-wavelength demonstrates no shift after bonding. Several InP surface activation procedures have been investigated. This bonding approach is compatible with guiding designs including a nanostructuration, thus enabling specific designs associated to desirable optical functions.

[1]  Philippe Regreny,et al.  III-V/Si photonics by die-to-wafer bonding , 2007 .

[2]  Y. Arakawa,et al.  III-V/Si hybrid photonic devices by direct fusion bonding , 2012, Scientific Reports.

[3]  Y. Arakawa,et al.  1.3 µm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces , 2012, 2012 38th European Conference and Exhibition on Optical Communications.

[4]  Di Liang,et al.  Design of phase-shifted hybrid silicon distributed feedback lasers. , 2011, Optics express.

[5]  Gilles Patriarche,et al.  Structure of the GaAs/InP interface obtained by direct wafer bonding optimised for surface emitting optical devices , 1997 .

[6]  G. Roelkens,et al.  1310-nm Hybrid III–V/Si Fabry–Pérot Laser Based on Adhesive Bonding , 2011, IEEE Photonics Technology Letters.

[7]  R Baets,et al.  Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit. , 2007, Optics express.

[8]  G. Duan,et al.  Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler , 2012, IEEE Photonics Technology Letters.

[9]  John E. Bowers,et al.  Design of silicon hetero-interface photodetectors , 1997 .

[10]  Y. Chabal,et al.  Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation. , 1990, Physical review letters.

[11]  K. Hjort,et al.  Evaluation of InP-to-silicon heterobonding , 2001 .

[12]  J. Bowers,et al.  Hybrid silicon evanescent devices , 2007 .

[13]  John E. Bowers,et al.  Wafer bonded 1.55 μm vertical-cavity lasers with continuous-wave operation up to 105 °C , 2001 .

[14]  John E. Bowers,et al.  Silicon heterointerface photodetector , 1996 .

[15]  L. Largeau,et al.  Heteroepitaxial bonding of Si for hybrid photonic devices , 2013 .

[16]  C. Pang,et al.  Nanostructured silicon geometries for directly bonded hybrid III–V-silicon active devices , 2013 .

[17]  James S. Speck,et al.  High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals , 2010 .