论文信息 - Thermoelectric properties of Bi2Te3 material obtained by the ultrarapid quenching process route - 字舞流文

Thermoelectric properties of Bi2Te3 material obtained by the ultrarapid quenching process route

E. Koukharenko | J. Tedenac | N. Fréty | V. Shepelevich

[1] A. Giani,et al. Preparation and characterization of MOCVD bismuth telluride thin films , 1998 .

[2] P. Ganesan,et al. Thickness and temperature effects on thermoelectric power and electrical resistivity of (Bi0.25Sb0.75)2Te3 thin films , 1998 .

[3] Ove Jepsen,et al. Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide , 1997 .

[4] M. Stordeur,et al. The Thermoelectric Figure of Merit in the Mixed Crystal System p‐(Bi1−xSbx)2 Te3 , 1990 .

[5] R. Ionescu,et al. Grain Size Effect on the Figure of Merit of Sintered Solid Solutions Based on Bi2Te3 , 1975 .

[6] F. D. Rosi,et al. Compound tellurides and their alloys for peltier cooling—A review , 1972 .

[7] C. Champness,et al. THE HALL AND SEEBECK EFFECTS IN NONSTOICHIOMETRIC BISMUTH TELLURIDE , 1966 .

[8] H J Goldsmid,et al. The use of semiconductors in thermoelectric refrigeration , 1954 .

[9] M. Stordeur,et al. Antisite defects in Sb2-xBixTe3 mixed crystals , 1988 .

[10] L. Koudelka,et al. Energy formation of antisite defects in doped Sb2Te3 and Bi2Te3 crystals , 1986 .