论文信息 - On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors - 字舞流文

On the calculation of effective electric field in In0.53Ga0.47As surface channel metal-oxide-semiconductor field-effect-transistors

G. Bersuker | P. Hurley | E. Vogel | R. Wallace | R. Galatage | A. Gocalinska | E. Pelucchi | K. Thomas | C. Hinkle | N. Goel | A. Sonnet | W. Kirk | Jeff Huang