论文信息 - Fault isolation using Electrically-enhanced LADA (EeLADA)

Fault isolation using Electrically-enhanced LADA (EeLADA)

Pulsed-LADA is found to play an important role in the advancement of next-generation LADA and it is reported that tens of μs pulses with 10 kHz frequency is sufficient to observe enhancements in carrier injection. Electrically-enhanced LADA (EeLADA), based on pulsed-LADA, is introduced as a new fault localization method capable to overcome current limitation of Laser Assisted Device Alteration (LADA) application on soft failure and extends it to hard failure debug. We present the EeLADA methodology and experimental data to demonstrate its feasibility.

[1] Sh Goh. Debugging Phase Locked Loop Failures in Integrated Circuit Products , 2014 .

[2] Jeffrey Lam,et al. Effectiveness of frequency mapping on 28 nm device broken scan chain failures. , 2012, The Review of scientific instruments.

[3] Keith A. Serrels. Two-Photon-Absorption-Enhanced Laser-Assisted Device Alteration and Single-Event Upsets in 28nm Silicon Integrated Circuits , 2013 .

[4] Dan J. Bodoh. Improving the DLS Workflow , 2012 .

[6] Jeremy A. Rowlette,et al. Critical timing analysis in microprocessors using near-ir laser assisted device alteration (lada) , 2003, International Test Conference, 2003. Proceedings. ITC 2003..

[7] Sh Goh. Advanced CMOS Device Fault Isolation Using Frequency Mapping On Passive Structures , 2013 .

[8] Paiboon Tangyunyong,et al. Soft defect localization (SDL) in integrated circuits using laser scanning microscopy , 2003, The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..

[9] C. Boit,et al. Quantitative Investigation of Laser Beam Modulation in Electrically Active Devices as Used in Laser Voltage Probing , 2007, IEEE Transactions on Device and Materials Reliability.