论文信息 - 1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits - 字舞流文

1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits

Z. Shen | Gaoqiang Deng | Jun Wang | Hangzhi Liu | Shiwei Liang | Bin Ji | Hengyu Yu

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