论文信息 - Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach

Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach

A study of pseudomorphic layers properties using a selfconsistent approach is presented. The strain effects are taken into account. Sheet carrier density and capacitance voltage characteristics are related to technological layer parameters. Simple expressions of subband energy well suited for CAD are then deduced.

Henri Happy | Alain Cappy | Yvon Cordier | Jocelyn Alamkan

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