Monte Carlo Methods in Defects Migration -- Spontaneous Annealing of Damage Induced by Ion Implantation
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[1] L. Fosdick. Calculation of Order Parameters in a Binary Alloy by the Monte Carlo Method , 1959 .
[2] J. Beeler. Order-Disorder Events Produced by Single-Vacancy Migration. II , 1963 .
[3] W. Frank. Interstitial properties deduced from internal friction measurements on boron-implanted silicon , 1974 .
[4] S. M. Hu,et al. Defects in silicon substrates , 1977 .
[5] G. Ruani,et al. A Monte Carlo simulation of precipitation phenomena in a diamond lattice , 1984 .
[6] K. Kawasaki. Diffusion Constants near the Critical Point for Time-Dependent Ising Models. I , 1966 .
[7] L. M. Howe,et al. Collision cascades in silicon , 1980 .
[8] M. Kalos,et al. Monte carlo study of the phase diagrams of binary alloys with face centered cubic lattice structure , 1981 .
[9] D. Thompson,et al. Disorder production and amorphisation in ion implanted silicon , 1980 .
[10] H. Carstanjen,et al. Location of Si-interstitials in radiation damaged Si-crystals with double alignment channeling technique , 1976 .
[11] K. Weiser. Theory of Diffusion and Equilibrium Position of Interstitial Impurities in the Diamond Lattice , 1962 .
[12] N. Metropolis,et al. Equation of State Calculations by Fast Computing Machines , 1953, Resonance.
[13] D. Doran,et al. Computer simulation of displacement spike annealing , 1970 .
[14] R. Thorn,et al. Thermodynamics of non-stoichiometry A model for UCx , 1976 .
[15] P. Flinn. Monte Carlo calculation of phase separation in a two-dimensional Ising system , 1974 .
[16] P. Flinn,et al. Monte Carlo Calculation of the Order-Disorder Transformation in the Body-Centered Cubic Lattice , 1961 .
[17] G. D. Watkins,et al. Carbon Interstitial in the Diamond Lattice , 1973 .
[18] D. Landau,et al. Monte Carlo study of the fcc Blume-Capel model , 1980 .