Performance of new high-power HVM LPP-EUV source
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Tsuyoshi Yamada | Tamotsu Abe | Hiroshi Tanaka | Hiroaki Nakarai | Shinji Okazaki | Hakaru Mizoguchi | Krzysztof M. Nowak | Yasufumi Kawasuji | Yukio Watanabe | Tsukasa Hori | Takeshi Kodama | Yutaka Shiraishi | Tatsuya Yanagida | Taku Yamazaki | Takashi Saitou
[1] Tsuyoshi Yamada,et al. Development of 250W EUV light source for HVM lithography , 2016, 2016 China Semiconductor Technology International Conference (CSTIC).
[2] Hiroki Tanaka,et al. Comparative study on emission characteristics of extreme ultraviolet radiation from CO2 and Nd:YAG laser-produced tin plasmas , 2005 .
[3] Guido Schiffelers,et al. ASML's NXE platform performance and volume introduction , 2013, Advanced Lithography.
[4] Georg Soumagne,et al. 100W 1st generation laser-produced plasma light source system for HVM EUV lithography , 2011, Advanced Lithography.
[5] Judon Stoeldraijer,et al. EUV into production with ASML's NXE platform , 2010, Advanced Lithography.
[6] Akira Sumitani,et al. Development of the reliable 20 kW class pulsed carbon dioxide laser system for LPP EUV light source , 2011, Advanced Lithography.
[7] Georg Soumagne,et al. Characterization and optimization of tin particle mitigation and EUV conversion efficiency in a laser produced plasma EUV light source , 2011, Advanced Lithography.
[8] Koichi Toyoda,et al. Laser produced EUV light source development for HVM , 2007, SPIE Advanced Lithography.
[9] John D. Gillaspy,et al. EUV Sources for Lithography, ed. by V. Bakshi , 2006 .
[10] John Zimmerman,et al. EUV lithography with the Alpha Demo Tools: status and challenges , 2007, SPIE Advanced Lithography.
[11] Judon Stoeldraijer,et al. EUV lithography at chipmakers has started: performance validation of ASML's NXE:3100 , 2011, Advanced Lithography.