论文信息 - X-ray photoelectron spectroscopic analysis of HfO2/Hf/SiO2/Si structure - 字舞流文

X-ray photoelectron spectroscopic analysis of HfO2/Hf/SiO2/Si structure

R. Tan | Y. Azuma | I. Kojima

[1] R. Tan,et al. Preparation of ultrathin HfO2 films and comparison of HfO2/SiO2/Si interfacial structures , 2004 .

[2] R. Tan,et al. Suppression of interfacial diffusion by a predeposited Hf metal layer on SiO2/Si , 2004 .

[3] R.M.C. de Almeida,et al. Reaction–diffusion in high-k dielectrics on Si , 2003 .

[4] Olivier Renault,et al. HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy , 2002 .

[5] Y. Hoshino,et al. Characterization and control of the HfO2/Si(001) interfaces , 2002 .

[6] S. Hayashi,et al. Effect of Hf metal predeposition on the properties of sputtered HfO2/Hf stacked gate dielectrics , 2002 .

[7] E. Garfunkel,et al. Soft x-ray photoemission studies of the HfO2/SiO2/Si system , 2002 .

[8] T. Fujimoto,et al. An ultrahigh vacuum sputtering system with offset incidence magnetron sources onto a rotating substrate , 1999 .

[9] S. Hofmann. Sputter depth profile analysis of interfaces , 1998 .

[10] Seiichi Iwata,et al. Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics , 1996 .

[11] D. R. Penn,et al. Calculations of electron inelastic mean free paths. III. Data for 15 inorganic compounds over the 50–2000 eV range , 1991 .