Manipulation of localized charge states in n-MOSFETs with microwave irradiation

Abstract We demonstrate how the charge state of a trap at the Si/SiO 2 interface in a MOSFET can be controlled by microwave irradiation. The device is immersed in a static magnetic field at 300 mK and operates at small bias. Under such experimental conditions the electron spins are almost fully polarized. The electron occupancy of the trap is reversibily raised from one to two electrons by turning on a microwave field of less than 10 μW. Such contactless method controls the charge bound to defects close to the channel and it enables the fast initialization of the charge and spin state of the trapped electrons. This is particularly important in those spin resonance quantum computation schemes where a channel current senses the charge state, to improve the switching clock and to eliminate the related noise.

[1]  L. Vandersypen,et al.  Single-shot read-out of an individual electron spin in a quantum dot , 2004, Nature.

[2]  Wheeler Rg,et al.  Resonant tunneling through single electronic states and its suppression in a magnetic field. , 1988 .

[3]  Lee,et al.  Two-dimensional resonant tunneling. , 1988, Physical review. B, Condensed matter.

[4]  C. Buizert,et al.  Driven coherent oscillations of a single electron spin in a quantum dot , 2006, Nature.

[5]  R. Howard,et al.  Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise , 1984 .

[6]  E. Yablonovitch,et al.  Electrical detection of the spin resonance of a single electron in a silicon field-effect transistor , 2004, Nature.

[7]  A. Kitaev.  Fault tolerant quantum computation by anyons , 1997, quant-ph/9707021.

[8]  E. Simoen,et al.  Random Telegraph Signal: a local probe for single point defect studies in solid-state devices , 2002 .

[9]  Alessandro Calderoni,et al.  Microwave irradiation effects on random telegraph signal in a MOSFET , 2007 .

[10]  J. A. López-Villanueva,et al.  Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures , 1997 .

[11]  G. Ferrari,et al.  Effect of the triplet state on the random telegraph signal in Si n-MOSFETs , 2005, cond-mat/0512692.

[12]  B. E. Kane.  A silicon-based nuclear spin quantum computer , 1998, Nature.

[13]  G. Ferrari,et al.  dc modulation in field-effect transistors operating under microwave irradiation for quantum readout , 2005 .

[14]  Michael J. Uren,et al.  1/f and random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors , 1985 .

[15]  E. Klumperink,et al.  Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise , 2003 .

[16]  Mark A. Eriksson,et al.  Practical design and simulation of silicon-based quantum-dot qubits , 2003 .

[17]  K. Kandiah,et al.  A physical model for random telegraph signal currents in semiconductor devices , 1989 .

[18]  Eli Yablonovitch,et al.  Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures , 1999, quant-ph/9905096.

[19]  Webb,et al.  Observation of resonant tunneling in silicon inversion layers. , 1986, Physical review letters.