Modeling and Understanding the Compact Performance of h‐BN Dual‐Gated ReS2 Transistor
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A. Chasin | B. Kaczer | E. Bury | D. Shin | Gyu-Tae Kim | Sang Wook Lee | Junhong Na | A. Grill | S. Van Beek | K. Lee | Junhee Choi | Jaewoo Lee | Jungu Chun | Hyeran Cho | J. Diaz-Fortuny | Jae Woo Lee
[1] Jinwoo Shin,et al. Metal-Contact Improvement in a Multilayer WSe2 Transistor through Strong Hot Carrier Injection. , 2021, ACS applied materials & interfaces.
[2] Hyebin Lee,et al. Multiple machine learning approach to characterize two-dimensional nanoelectronic devices via featurization of charge fluctuation , 2021, npj 2D Materials and Applications.
[3] Hyebin Lee,et al. Defect spectroscopy of sidewall interfaces in gate-all-around silicon nanosheet FET , 2020, Nanotechnology.
[4] Hua Xu,et al. 2D Re‐Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities , 2020, Advanced science.
[5] Gyu-Tae Kim,et al. Understanding of the aging pattern in quantum dot light-emitting diodes using low-frequency noise. , 2020, Nanoscale.
[6] I. Shelykh,et al. High refractive index and extreme biaxial optical anisotropy of rhenium diselenide for applications in all-dielectric nanophotonics , 2020, Nanophotonics.
[7] S. Byeon,et al. Detection and Accurate Classification of Mixed Gases Using Machine Learning with Impedance Data , 2020 .
[8] S. Kim,et al. Drain induced barrier increasing in multilayer ReS2 , 2020, 2D Materials.
[9] Doyoon Kim,et al. Understanding tunable photoresponsivity of two-dimensional multilayer phototransistors: Interplay between thickness and carrier mobility , 2020 .
[10] Jinwoo Shin,et al. Real-time effect of electron beam on MoS2 field-effect transistors , 2020, Nanotechnology.
[11] Hanwen Wang,et al. A FinFET with one atomic layer channel , 2020, Nature Communications.
[12] Hyebin Lee,et al. Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications. , 2019, Nanoscale.
[13] C. Lien,et al. Analog Circuit Applications Based on All‐2D Ambipolar ReSe2 Field‐Effect Transistors , 2019, Advanced Functional Materials.
[14] David-Wei Zhang,et al. Electronic and Optoelectronic Applications Based on ReS2 , 2019, physica status solidi (RRL) – Rapid Research Letters.
[15] Saurabh Lodha,et al. Multilayer ReS2 Photodetectors with Gate Tunability for High Responsivity and High-Speed Applications. , 2018, ACS applied materials & interfaces.
[16] Xavier Gonze,et al. Vibrational and dielectric properties of the bulk transition metal dichalcogenides , 2018, Physical Review Materials.
[17] W. Yu,et al. Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors , 2018 .
[18] M. L. Van de Put,et al. Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk , 2018, npj 2D Materials and Applications.
[19] Chunxiang Zhu,et al. Low-Frequency Noise in Layered ReS2 Field Effect Transistors on HfO2 and Its Application for pH Sensing. , 2018, ACS applied materials & interfaces.
[20] Francky Catthoor,et al. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability , 2018, Microelectron. Reliab..
[21] H. Joe,et al. Contact Effect of ReS2/Metal Interface. , 2017, ACS applied materials & interfaces.
[22] David-Wei Zhang,et al. A two-dimensional semiconductor transistor with boosted gate control and sensing ability , 2017, Science Advances.
[23] A. Bhardwaj,et al. In situ click chemistry generation of cyclooxygenase-2 inhibitors , 2017, Nature Communications.
[24] A. Kis,et al. Disorder engineering and conductivity dome in ReS2 with electrolyte gating , 2016, Nature Communications.
[25] G. Fecher,et al. Multiple Dirac cones at the surface of the topological metal LaBi , 2016, Nature Communications.
[26] M. Mitchell Waldrop,et al. The chips are down for Moore’s law , 2016, Nature.
[27] Fucai Liu,et al. Highly Sensitive Detection of Polarized Light Using Anisotropic 2D ReS2 , 2016 .
[28] Hsin-Ying Chiu,et al. Transient Absorption Measurements on Anisotropic Monolayer ReS2. , 2015, Small.
[29] Mohamad A. Kabbani,et al. Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2) , 2015, Advanced materials.
[30] Gyu-Tae Kim,et al. Few-layer black phosphorus field-effect transistors with reduced current fluctuation. , 2014, ACS nano.
[31] A. Hirata,et al. Chemically exfoliated ReS2 nanosheets. , 2014, Nanoscale.
[32] Wei Chen,et al. Role of metal contacts in high-performance phototransistors based on WSe2 monolayers. , 2014, ACS nano.
[33] Dumitru Dumcenco,et al. Electrical transport properties of single-layer WS2. , 2014, ACS nano.
[34] A. Kis,et al. Electron and hole mobilities in single-layer WSe2. , 2014, ACS nano.
[35] H. J. Choi,et al. Separation of interlayer resistance in multilayer MoS2 field-effect transistors , 2014 .
[36] M. Dresselhaus,et al. Raman enhancement effect on two-dimensional layered materials: graphene, h-BN and MoS2. , 2014, Nano letters.
[37] Helmuth Berger,et al. Mono- and bilayer WS2 light-emitting transistors. , 2014, Nano letters.
[38] Deji Akinwande,et al. On the mobility and contact resistance evaluation for transistors based on MoS2 or two-dimensional semiconducting atomic crystals , 2014 .
[39] Sefaattin Tongay,et al. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling , 2014, Nature Communications.
[40] L. Lauhon,et al. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. , 2014, ACS nano.
[41] Ning Lu,et al. HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability. , 2013, ACS nano.
[42] J. Appenzeller,et al. Where does the current flow in two-dimensional layered systems? , 2013, Nano letters.
[43] Lain‐Jong Li,et al. Large-area synthesis of highly crystalline WSe(2) monolayers and device applications. , 2013, ACS nano.
[44] J. Appenzeller,et al. Screening and interlayer coupling in multilayer MoS2 , 2013 .
[45] F. Guinea,et al. Electric‐Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling , 2012, Advanced materials.
[46] G. Ghibaudo,et al. Parameter extraction of nano-scale MOSFETs using modified Y function method , 2010, 2010 Proceedings of the European Solid State Device Research Conference.
[47] E. Akturk,et al. Mechanical and Electronic Properties of MoS2 Nanoribbons and Their Defects , 2010, 1009.5488.
[48] S. Cristoloveanu,et al. Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors , 2007 .
[49] Mikael Östling,et al. Low-Frequency Noise in Advanced MOS Devices , 2007 .
[50] Dieter K. Schroder,et al. Negative bias temperature instability: What do we understand? , 2007, Microelectron. Reliab..
[51] C. Ho,et al. In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals , 2001 .
[52] D. Schroder. Semiconductor Material and Device Characterization , 1990 .
[53] Hei Wong,et al. Study of the electronic trap distribution at the SiO/sub 2/-Si interface utilizing the low-frequency noise measurement , 1990 .
[54] Gerard Ghibaudo,et al. New method for the extraction of MOSFET parameters , 1988 .
[55] Rogers,et al. Nature of single-localized-electron states derived from tunneling measurements. , 1985, Physical review letters.
[56] R. Resta. Thomas-Fermi dielectric screening in semiconductors , 1977 .
[57] Noise in Nanoscale Semiconductor Devices , 2020 .