High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits

In this paper, we present and review recent developments in the high-density plasma chemical vapor deposition (HDP CVD) of silicon-based dielectric films, and of films of recent interest in the development of lower-dielectric-constant alternatives. Aspects relevant to the HDP CVD process and using the process to achieve interlevel insulation, gap filling, and planarization are discussed. Results obtained thus far suggest that the process may play an important role in the future fabrication of integrated circuits, provided several metal-contamination and process-integration concerns can be effectively addressed.

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