The influence of the chlorine-hydrogen ratio in the gas phase on the stability of the {113} faces of silicon in Si-H-Cl CVD

[1]  J. Gardeniers,et al.  Influence of temperature on the crystal habit of silicon in the SiHCl CVD system II. Surface tension of faces in the 〈110〉 zones , 1989 .

[2]  J. Gardeniers,et al.  Influence of temperature on the crystal habit of silicon in the SiHCl CVD system I. Experimental results , 1989 .

[3]  Mishra,et al.  Investigation of the electronic structures and associated properties including hyperfine interactions for halogen-adsorbed silicon surfaces: Fluorine through iodine. , 1988, Physical Review B (Condensed Matter).

[4]  George,et al.  Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces. , 1988, Physical review. B, Condensed matter.

[5]  L. P. Hunt Thermodynamic Equilibria in the Si‐H‐Cl and Si‐H‐Br Systems , 1988 .

[6]  K. W. Frese Calculation of surface binding energy for hydrogen, oxygen, and carbon atoms on metallic surfaces , 1987 .

[7]  B. Meyerson,et al.  Mechanistic Studies of Chemical Vapor Deposition , 1987 .

[8]  L. J. Giling,et al.  Adsorption on Si(111) during CVD of silicon from silane: The effect of temperature, bond strength, supersaturation and pressure , 1986 .

[9]  Robert J. Kee,et al.  A Mathematical Model of Silicon Chemical Vapor Deposition Further Refinements and the Effects of Thermal Diffusion , 1986 .

[10]  Michael E. Coltrin,et al.  A theoretical study of the heats of formation of silicon hydride (SiHn), silicon chloride (SiCln), and silicon hydride chloride (SiHnClm) compounds , 1985 .

[11]  L. J. Giling,et al.  Epitaxial Growth of Silicon by CVD in a Hot-Wall Furnace , 1985 .

[12]  Chin-An Chang Empirical Calculations of Molecular Properties , 1984 .

[13]  P. Bagus,et al.  Ab initio cluster study of the interaction of fluorine and chlorine with the Si(111) surface , 1983 .

[14]  M. Henzler,et al.  Adsorption of atomic hydrogen on clean cleaved silicon (111) , 1983 .

[15]  Robin Walsh,et al.  Thermochemistry of silicon-containing compounds. Part 1.—Silicon–halogen compounds, an evaluation , 1983 .

[16]  A. N. Syverud,et al.  JANAF Thermochemical Tables, 1982 Supplement , 1982 .

[17]  J. Joannopoulos,et al.  Electronic states and total energies in hydrogenated amorphous silicon , 1982 .

[18]  Robin Walsh,et al.  Bond dissociation energy values in silicon-containing compounds and some of their implications , 1981 .

[19]  K. Zellama,et al.  Possible configurational model for hydrogen in amorphous Si:H. An exodiffusion study , 1981 .

[20]  T. N. Bell,et al.  Heats of formation and dissociation of methylsilanes and chlorosilanes and derived radicals , 1981 .

[21]  I. Saunders Crystal growth '78 , 1979 .

[22]  C. V. D. Brekel Growth rate anisotropy and morphology of autoepitaxial silicon films from SiCl4 , 1974 .

[23]  J. Margrave,et al.  Interpretation of dissociative‐electron attachment processes for silicon tetrachloride , 1974 .

[24]  L. P. Hunt,et al.  High Temperature Reactions in the Silicon‐Hydrogen‐Chlorine System , 1974 .

[25]  L. P. Hunt,et al.  A Thorough Thermodynamic Evaluation of the Silicon‐Hydrogen‐Chlorine System , 1972 .

[26]  J. Nishizawa,et al.  Layer growth in silicon epitaxy , 1972 .

[27]  L. Hollan,et al.  Étude de l'anisotropie de la croissance épitaxiale de GaAs en phase vapeur , 1972 .

[28]  P. Hartman The non-uniform distribution of faces in a zone , 1965 .

[29]  M. Wilson,et al.  Infrared Spectra and Molecular Structures of SiH3F, SiH3Cl, and SiH3Br , 1956 .

[30]  Conyers Herring,et al.  Some Theorems on the Free Energies of Crystal Surfaces , 1951 .