1∕f noise of SnO2 nanowire transistors

The low frequency (1∕f) noise in single SnO2 nanowire transistors was investigated to access semiconductor-dielectric interface quality. The amplitude of the current noise spectrum (SI) is found to be proportional to Id2 in the transistor operating regime. The extracted Hooge’s constants (αH) are 4.5×10−2 at Vds=0.1V and 5.1×10−2 at Vds=1V, which are in general agreement with our prior studies of nanowire/nanotube transistors characterized in ambient conditions. Furthermore, the effects of interface states and contacts on the noise are also discussed.

[1]  Ho-Young Cha,et al.  Fabrication and characterization of pre-aligned gallium nitride nanowire field-effect transistors , 2006 .

[2]  Jun Liu,et al.  Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. , 2007, Nature nanotechnology.

[3]  Electronic transport imaging in a multiwire SnO2 chemical field-effect transistor device , 2005, cond-mat/0506621.

[4]  T. Choi,et al.  Fabrication and electrical characterization of circuits based on individual tin oxide nanowires , 2006, Nanotechnology.

[5]  Martin Moskovits,et al.  Detection of CO and O2 Using Tin Oxide Nanowire Sensors , 2003 .

[6]  D. Janes,et al.  Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. , 2005, Nano letters.

[7]  A. Kolmakov,et al.  Electronic control of chemistry and catalysis at the surface of an individual tin oxide nanowire. , 2005, The journal of physical chemistry. B.

[8]  Masa Ishigami,et al.  Hooge’s constant for carbon nanotube field effect transistors , 2006 .

[9]  D. Janes,et al.  High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment , 2007 .

[10]  Wei Lu,et al.  Fully transparent thin-film transistor devices based on SnO2 nanowires. , 2007, Nano letters.

[11]  Tobin J. Marks,et al.  Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements , 2008 .

[12]  John S. Suehle,et al.  Low frequency noise characterizations of ZnO nanowire field effect transistors , 2007 .

[13]  Douglas A. Keszler,et al.  Tin oxide transparent thin-film transistors , 2004 .

[14]  Charles M. Lieber,et al.  Direct ultrasensitive electrical detection of DNA and DNA sequence variations using nanowire nanosensors , 2004 .

[15]  J. Gilman,et al.  Nanotechnology , 2001 .

[16]  Tobin J. Marks,et al.  σ-π molecular dielectric multilayers for low-voltage organic thin-film transistors , 2005 .

[17]  Chao Li,et al.  Laser Ablation Synthesis and Electron Transport Studies of Tin Oxide Nanowires , 2003 .