An improved generalized guide for MOSFET scaling

For the miniaturization of MOSFETs, a generalized guide for scaling was given by J.R. Brews et al. (see IEEE Electron Dev. Lett., vol EDL-1, p.2, 1980). This formula can be used as a good starting point before device fine tuning, and works well above 0.5 mu m in channel length. It is expected, however, that for channel lengths below 0.5 mu m, it becomes inaccurate because of the nature of the equation. The erroneous implication is that if gate oxide or junction depth approaches zero, the channel length can be reduced to zero without short-channel effects. A formula in which the functions are modified to correct this anomaly is presented. Another important improvement is that the degree of short-channel effect is left as an input variable to fit the different requirements of circuits. The revised formula has been shown to be accurate down to 0.1- mu m channel length. >