论文信息 - NH3 Plasma Treatment for Flash Memory on Poly-Si Thin Films

NH3 Plasma Treatment for Flash Memory on Poly-Si Thin Films

In this paper, we fabricated the poly-Si-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved including charge storage, drain disturbance, and gate disturbance.

Yu-Hsien Lin | Tien-Sheng Chao | Hsin-Chiang You | Jay-Chi Chou | Tung-Huan Chou

[1] M. Yamaguchi,et al. Novel multi-bit SONOS type flash memory using a high-k charge trapping layer , 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

[2] Yasuhisa Oana,et al. Current and future technology of low‐temperature poly‐Si TFT‐LCDs , 2001 .

[3] D. Ast,et al. Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors , 1991 .

[4] T. Serikawa,et al. Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs , 1989 .

[5] H. Ohshima,et al. Future trends for TFT integrated circuits on glass substrates , 1989, International Technical Digest on Electron Devices Meeting.

[6] Chun-Yen Chang,et al. High-performance nonvolatile HfO/sub 2/ nanocrystal memory , 2005 .

[7] Chun-Yen Chang,et al. Novel two-bit HfO/sub 2/ nanocrystal nonvolatile flash memory , 2006 .

[8] Novel Two-Bit HfO 2 Nanocrystal Nonvolatile , 2006 .

[9] S. B. Herner,et al. 3D TFT-SONOS memory cell for ultra-high density file storage applications , 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).