Unified MOSFET compact I-V model formulation through physics-based effective transformation

A one-region compact I/sub ds/ model from subthreshold to saturation, which resembles the same form as the well-known long-channel model but includes all major short-channel effects (SCEs) in deep-submicron (DSM) MOSFETs, has been formulated through physics-based effective transformation. The model has 23 process-dependent fitting parameters, which requires an 11-step, one-iteration extraction procedure. The new approach to modeling channel-length modulation (CLM), subthreshold diffusion current, and edge-leakage current, all in a compact form, has been verified with the 0.25-/spl mu/m experimental data. The model covers the full range of gate length (without "binning") and bias conditions, and can be correlated to true process variables for aiding technology development.

[2]  Renate Sitte,et al.  Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET's , 1994 .

[3]  R. Rios,et al.  PCIM: a physically based continuous short-channel IGFET model for circuit simulation , 1994 .

[4]  D. Chan,et al.  A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's , 1998 .

[5]  G. Baccarani,et al.  A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects , 1999 .

[6]  N. G. Einspruch.  VLSI electronics: Microstructure science. Volume 9 , 1982 .

[7]  S. Geissler,et al.  The current-carrying corner inherent to trench isolation , 1993, IEEE Electron Device Letters.

[8]  K. Y. Lim,et al.  Modelling of threshold voltage with non-uniform substrate doping [MOSFET] , 1998, ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187).

[9]  J.A.M. Otten,et al.  A novel technique to determine the gate and drain bias dependent series resistance in drain engineered MOSFETs using one single device , 1996 .

[10]  T. Skotnicki,et al.  The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects , 1988, IEEE Electron Device Letters.

[11]  J. T. Clemens,et al.  Characterization of the electron mobility in the inverted <100> Si surface , 1979, 1979 International Electron Devices Meeting.

[12]  Sheng-Lyang Jang,et al.  An analytical drain current model for submicrometer and deep submicrometer MOSFET's , 1997 .

[13]  Xing Zhou,et al.  A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modeling , 1999 .

[14]  Sheng-Lyang Jang,et al.  A compact LDD MOSFET I-V model based on nonpinned surface potential , 1998 .

[15]  H. Iwai,et al.  Nonscaling of MOSFET's linear resistance in the deep submicrometer regime , 1998, IEEE Electron Device Letters.

[16]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[17]  Xing Zhou,et al.  A new "critical-current at linear-threshold" method for direct extraction of deep-submicron MOSFET effective channel length , 1999 .

[18]  K. Y. Lim,et al.  A physically-based semi-empirical series resistance model for deep-submicron MOSFET I-V modeling , 2000 .

[19]  Xing Zhou,et al.  A physically-based semi-empirical effective mobility model for MOSFET compact I- V modeling , 2001 .

[20]  Yuhua Cheng,et al.  A unified MOSFET channel charge model for device modeling in circuit simulation , 1998, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[21]  K. Y. Lim,et al.  A general approach to compact threshold voltage formulation based on 2D numerical simulation and experimental correlation for deep-submicron ULSI technology development [CMOS] , 2000 .

[22]  C. Hu,et al.  Threshold voltage model for deep-submicrometer MOSFETs , 1993 .