Performance Investigation of Amorphous InGaZnO Flexible Thin-Film Transistors Deposited on PET Substrates

Amorphous indium gallium zinc oxide (a-InGaZnO) flexible thin-film transistors (TFTs) were deposited on polyethylene terephthalate (PET) substrates at low temperature using a triple-targets magnetron radio frequency (RF) cosputter system. During the deposition of InGaZnO films, triple targets of In<sub>2</sub>O<sub>3</sub> target, Ga<sub>2</sub>O<sub>3</sub> target, and Zn target were simultaneously sputtered. By varying the mixing gas ratios, the Ar/O<sub>2</sub> ratio of 55 sccm/45 sccm was used as the sputtering gases to deposit the InGaZnO channel layer. The bottom-gate-type triple-targets InGaZnO flexible TFTs operated in n-type enhancement mode with a transconductance of 4.95×10<sup>-5</sup> S, a field-effect mobility of 57.2 cm<sup>2</sup>/V·s, an on/off ratio of 4.19×10<sup>7</sup>, a turn-on voltage of 0 V, a threshold voltage of 2.5 V, and a subthreshold swing of 0.23 V/decade, which were much better than those of the single InGaZnO target flexible TFTs.

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