论文信息 - High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range

High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range

GaInAsSb/GaSb p‐n heterojunction photodiodes prepared by liquid phase epitaxy are described. The low net acceptor concentration obtained by Te compensation of the quaternary layer permits a room‐temperature external quantum efficiency of 67±5% to be achieved at a wavelength of 2.2 μm.

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