Multilayered encapsulation of GaAs

A method is described by which GaAs may be encapsulated to withstand annealing temperatures over 1100 °C using a double−layered encapsulant consisting of arsenic‐doped silicon dioxide on top of plasma‐deposited silcion nitride. Samples encapsulated in such a manner and annealed show no signs of mechanical failure and yield higher electrical activation of ion‐implanted Se when compared to samples annealed with Si3N4 only. In addition, there is no detectable out‐diffusion of Ga or As and no detectable in‐diffusion of Si. Peak electrical activation of ion‐implanted Se has been measured as 1×1019 carriers/cm3 for samples annealed at 1100 °C. A first‐order strain analysis of general multilayered systems is also presented, indicating possible improvements on such an encapsulating procedure for GaAs as well as other compound semiconductors.

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