Threshold-sensitivity minimization of short-channel MOSFET's by computer simulation
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S. Horiguchi | A. Yoshii | K. Yokoyama | S. Horiguchi | A. Yoshii | K. Yokoyama | Kiyoyuki Yokoyama | Akira Yoshii | Shoji Horiguchi
[1] P.P. Wang,et al. Device characteristics of short-channel and narrow-width MOSFET's , 1978, IEEE Transactions on Electron Devices.
[2] J. Moll,et al. Breakdown mechanism in short-channel MOS transistors , 1978, 1978 International Electron Devices Meeting.
[3] O. Tomisawa,et al. Electrical characteristics of a DSA MOS transistor with a fine structure , 1979, IEEE Transactions on Electron Devices.
[4] R.H. Dennard,et al. 1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraints , 1979, IEEE Journal of Solid-State Circuits.
[5] R.H. Dennard,et al. 1 µm MOSFET VLSI technology: Part IV—Hot-electron design constraints , 1979, IEEE Transactions on Electron Devices.
[6] V. L. Rideout,et al. Device design considerations for ion implanted n-channel MOSFETs , 1975 .
[7] P.P. Wang,et al. Double boron implant short-channel MOSFET , 1977, IEEE Transactions on Electron Devices.
[8] T. Toyabe,et al. Analytical models of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis , 1979, IEEE Transactions on Electron Devices.
[9] H. S. Lee. An analysis of the threshold voltage for short-channel IGFET's , 1973 .
[10] S. Asai,et al. Analytical models of threshold voltage and breakdown voltage of short-channel MOSFETs derived from two-dimensional analysis , 1979, IEEE Journal of Solid-State Circuits.
[11] L. D. Yau,et al. A simple theory to predict the threshold voltage of short-channel IGFET's , 1974 .
[12] M. Shinoda,et al. A normally-off type buried channel MOSFET for VLSI circuits , 1978, 1978 International Electron Devices Meeting.
[13] K. Ohwada,et al. Threshold voltage theory for a short-channel MOSFET using a surface-potential distribution model , 1979 .