Adhesion, Wettability, and Surface Chemistry

Several problem areas related to photo-or electron-beam-resist/SiO2 interfaces are examined. These areas include adhesion measurement, effect of chemical and thermal treatment on SiO2 surface chemistry, resist surface chemistry, correlation of surface chemistry with adhesion, and wettability of SiO2 surfaces by resist materials. Surface energy measurements have been used as a means of elucidating SiO2 and resist film surface chemistry. The polar component of surface energy, ϒP, of both resist and substrate is found to be of prime importance in determining adhesion and wettability of resist/SiO2 composites. Best adhesion during wet etching is achieved if ϒP of both resist film and substrate is small. However, in the case of a resist with fairly large ϒP, it is necessary to make ϒP of the substrate sufficiently large to permit good wetting. Large effects of processing procedures on SiO2 wettability and adhesion are observed, and these effects are correlated with measured changes in surface energies.

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