High-Voltage, High-Frequency SiC Power MOSFETs Model Validation

Circuit simulator model validation procedures and results are presented for SiC power MOSFETs. The characteristics discussed include on-state conduction, resistive load switching, inductive load switching, and high voltage depletion capacitance. The validation procedures are performed using a script written in the AIM language that is incorporated in the Saberreg* circuit simulator. The script uses the model parameter sets from the IGBT Model Parameter ExtrACTion (IMPACT) tools to perform simulations and then compares the simulated results with measured characteristics. Example validation results are presented for recently developed 5 A, 10 kV SiC power MOSFETs demonstrating for the first time the model performance at the full application switching voltage (5 kV for the 10 kV devices).

[1]  A. Hefner.  Status of High-Voltage, High-Frequency Silicon-Carbide Power Devices | NIST , 2006 .

[2]  A. Hefner,et al.  Automated Parameter Extraction Software for High-Voltage, High-Frequency SiC Power MOSFETs , 2006, 2006 IEEE Workshops on Computers in Power Electronics.

[3]  J.M. Ortiz-Rodriguez,et al.  Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization , 2006, Conference Record of the 2006 IEEE Industry Applications Conference Forty-First IAS Annual Meeting.

[4]  Sei-Hyung Ryu,et al.  Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Devices , 2006, Conference Record of the 2006 IEEE Industry Applications Conference Forty-First IAS Annual Meeting.

[5]  Jih-Sheng Lai,et al.  Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion | NIST , 2004 .

[6]  Allen R. Hefner,et al.  Modeling Buffer Layer IGBT's for Circuit Simulation | NIST , 1993 .

[7]  A. Hefner,et al.  Automated parameter extraction software for advanced IGBT modeling , 2000, COMPEL 2000. 7th Workshop on Computers in Power Electronics. Proceedings (Cat. No.00TH8535).