论文信息 - Lower current operation of phase change memory cell with a thin TiO2 layer

Lower current operation of phase change memory cell with a thin TiO2 layer

The phase change memory cell with 8nm TiO2 layer inserted between phase change material Ge2Sb2Te5 and bottom heating electrode tungsten was fabricated. It showed an advanced electrical threshold switching characteristics in the dc current-voltage measurement with the much lower value of threshold voltage of 1.5V. The reset current of the device cell decreased 68% compared with that without TiO2 layer. These results will contribute to the lower power consumption of the phase change memory. Besides that, the device cell showed good endurance characteristics, demonstrating the capability of random access memory application.

[1] Stanford R. Ovshinsky,et al. Rapid Reversible Light-Induced Crystallization of Amorphous Semiconductors , 1971 .

[2] Ulrike Diebold,et al. The surface science of titanium dioxide , 2003 .

[3] S. Ziegler,et al. Influence of Bi doping upon the phase change characteristics of Ge2Sb2Te5 , 2004 .

[4] B. Levinger. Lattice Parameter of Beta Titanium at Room Temperature , 1953 .

[5] D. Ristau,et al. Development of a thermographic laser calorimeter. , 1986, Applied optics.

[6] Songlin Feng,et al. Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory , 2004 .

[7] Eric Pop,et al. Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films , 2007 .

[8] J. F. Webb,et al. One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F=0.15 μm) , 2003 .

[9] Sung-Min Yoon,et al. Polycrystalline silicon-germanium heating layer for phase-change memory applications , 2006 .

[10] Phase change memory cell with an upper amorphous nitride silicon germanium heating layer , 2007 .