400-mW single-frequency 660-nm semiconductor laser

Using an angled-grating broad-area structure in GaInP-AlInP material system, we obtain single spatial and longitudinal-mode operation at 660 nm. The grating stabilizes the mode to deliver over 400-mW continuous-wave at room temperature from a 60-/spl mu/m-wide stripe. This is about ten times higher than conventional distributed-feedback power output levels, and is the highest single-frequency power from a monolithic semiconductor device in this wavelength range. These devices should be useful for single-mode-fiber coupling and in applications where high-wavelength stability is required, such as spectroscopy, interferometry, or metrology.